2011. 3. 21 1/2 semiconductor technical data pg05dbtfc tvs diode for esd protection in portable electronics revision no : 5 protection in portable electronics applications. features h 50 watts peak pulse power (tp=8/20 s) h transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 5a(tp=8/20 s) h bidirectional type pin configuration structure. h small package for use in portable electronics. h suitable replacement for multi-layer varistors in esd protection applications. h protects one i/o or power line. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. h personal digital assistants (pdas) h notebooks, desktops, & servers. h portable instrumentation. h pagers peripherals. maximum rating (ta=25 ? ) tfsc dim millimeters a b c d e 1.00 0.05 0.80+0.10/-0.05 0.60 0.05 0.30 0.05 0.40 max cathode mark c d b a e f 0.13 0.05 f + _ + _ + _ + _ 1. anode 2. anode 1 2 electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 50 w junction temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? marking 6 21 21 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - ? 5 v reverse breakedown voltage v br i t = ? 1ma ? 5.8 - ? 7.8 v reverse leakage current i r v rwm = ? 5v - - ? 5 a clamping voltage v c i pp = ? 5a, tp=8/20 s - - ? 17 v junction capacitance c j v r =0v, f=1mhz - 15 25 pf
2011. 3. 21 2/2 pg05dbtfc revision no : 5 pulse duration tp ( s) 110 pp peak pulse power p (w) 100 10 100 1k peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 rated power or i (%) 0 pp 110 70 50 25 0 ambient temperature ta ( c) power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 peak pulse current i (%) 0 pp 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60 non-repetitive peak pulse power vs. pulse time
|
